发明名称 SEMICONDUCTOR MEMORY AND ITS EVALUATING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a means which can specify easily a trouble point in a power source boosting circuit caused by the insufficiency of boosting of VPP and can perform easily the evaluation of operation for each circuit block, and an evaluating and analyzing method using this means. SOLUTION: A power source boosting circuit (VPP generating circuit) of a semiconductor memory constituted of plural circuit blocks has a means which can evaluate individually respective operation of plural circuit blocks (2, 3, 4) constituting of operation switching circuits (5, 7) connecting or cutting off electrically at least two circuit blocks out of plural circuit blocks (2, 3, 4) by switching control signals (g, h), and electrode pads (6, 8) connecting the operation switching circuits (5, 7). Thus, operation can be evaluated for each circuit block, a trouble point can be narrowed down quickly.</p>
申请公布号 JP2002008392(A) 申请公布日期 2002.01.11
申请号 JP20000187283 申请日期 2000.06.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAKUMA TETSUJI
分类号 G01R31/28;G11C11/401;G11C11/407;G11C16/06;G11C29/00;G11C29/44;(IPC1-7):G11C29/00 主分类号 G01R31/28
代理机构 代理人
主权项
地址