| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of effectively reducing an inter-wiring capacity in the semiconductor device having the wiring of a damascene structure. SOLUTION: For instance, a wiring pattern groove 13 is formed on the surface of a silicone oxide film 12 provided on a semiconductor board 11. A barrier metal film 14 is selectively provided on the bottom face of the groove 13. The upper part of the barrier metal film 14 has a cavity part 15 between the side walls of the groove 13, and a wiring layer 16 is provided. The cavity part of low permittivity exists on the wall face, and damascene wiring is formed. |
