| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device having a high degree of freedom of design. SOLUTION: The semiconductor device 100 comprises a silicon substrate 10, a first impurity region 14 formed on the silicon substrate 10, an insulation layer 12 formed on the silicon substrate 10, a conductive layer 16 formed on the insulation layer 12, and a first silicide layer 50 for connecting the first impurity region 14 and the conductive layer 16 electrically. The first silicide layer 50 connects the first impurity region 14 with the conductive layer 16. The first silicide layer 50 has a thickness of not less than 30 nm.
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