| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability without any breakage due to stress concentration while maintaining adhesion with metal wiring and its manufacturing method in the semiconductor device using the organic compound of low permittivity as an interlayer insulation film. SOLUTION: In the semiconductor device having the interlayer insulation film 104 formed on the metal wiring 102 and comprising the organic compound of the low permittivity, second metal wiring 108 formed on the interlayer insulation film and an interlayer adhesion layer 106 provided so as to improve adhesion between the first interlayer insulation film and the second metal wiring, a stress buffering layer 105 in which between the interlayer insulation film and an interlayer adhesion layer, the elasticity is larger than the interlayer insulation film and smaller than the interlayer adhesion layer is provided.</p> |
