| 摘要 |
A P-channel MOS double gated transistor is provided with an electrical shield element located between the drain and the second gate. The shield is electrically connected to the first gate and is dc biased by the first gate control voltage at FIRST GATE SELECT. The presence of the first gate control voltage causes all the shield capacitances to charge and causes a depletion region between the shield and the drain. Prior to SECOND GATE SELECT, the electrical transient effects of activating the shield with a dc bias have expired. SECOND GATE SELECT introduces new transients (noise current), noteable charging of the capacitance between the drain and the second gate and formation of the final section of depletion region proximate the second gate completing the P channel. This capacitance is drastically reduced by the intervening shield, and the depletion transient is minimized by the priming depletion region established by the shield voltage.
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