| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and its producing method, in which generation of a defect due to slip is prevented using a high resistance substrate having excellent RF characteristics and the production yield is increased. SOLUTION: Generation of crystal defect, e.g. slip, can be prevented while suppressing lowering of resistance of a substrate by employing a substrate where the inter lattice oxygen concentration ([Oi]) is 8E17 cm-3 or less, oxygen deposit density ([BMD]) is 1E8 cm-3 or above, and resistivity is 500Ω.cm or above, and limiting the heat treatment process in the device process within 25 hours expressed in terms of 1000 deg.C.
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