| 摘要 |
PROBLEM TO BE SOLVED: To provide an MRAM which is capable of widening an operation margin by preventing the variation within a wafer plane of magneto-resistive element characteristics, prevents the degradation in the detecting sensivity of a reading out circuit rendered by the voltage drop by the resistance of wirings and transistors connected in series to magneto-resistive elements and allows high-speed reading out with high accuracy. SOLUTION: This magnetic random access memory consists of an X decoder to which the plural word lines 118 to 121 are connected, a Y peripheral circuit section having a Y decoder, power source, MOSFETs 106 to 109 and capacitors 110 to 113 and a cell array section where MOSFETs 122 to 137 and the magneto-resistive elements 138 to 153 are connected in series to unit memory cells. The voltage impressed to the magneto-resistive elements is controlled to a prescribed small value by the reference voltage of the X decoder and the prescribed drop voltage given by the threshold characteristic of the MOSFETs of the unit memory cells. The reading out of the data of the magneto-resistive elements is surely performed by the change in voltage of the capacitors generated by successively flow of the charges stored in the capacitors through the sense lines, the unit memory cell MOSFETs and the magneto-resistive elements.
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