| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a method for forming non-single-crystal semiconductor thin film that can speedily and continuously form a photovoltaic element for an efficient hydrogen plasma treatment process and high photoelectric conversion efficiency. SOLUTION: Preliminary heating is made at a temperature exceeding a substrate temperature when forming a semiconductor layer before hydrogen plasma treatment. A strip of substrate 107, a wind-off substrate 108, and a take-up substrate 109 are adapted. In the preliminary heating and post-stage heating, hydrogen is desirable for an atmospheric gas. When 50% or more of the atmospheric gas is hydrogen, gas other than hydrogen such as an inert gas including He, Ne, and Ar may be contained. Also, in the case of gas containing an element that can be taken in as an impurity to such semiconductor as N2, H2, H2O, and HF, the amount should be less, preferably 1% or less to hydrogen. With this procedure, an improved interface can be formed while relaxing the structure of an amorphous semiconductor layer, thus forming the photovoltaic element having improved photoelectric conversion efficiency.</p> |
