| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device, capable of using an advantageous semiconductor process in respect of manufacturing cost and mass productivity as the base, and which is low power consumption type where various kinds of single electronic transistors are used for a readout circuit, moreover, where refinement and large scale integration are possible and storage system can be selected easily. SOLUTION: A high conductivity layer 113 is disposed on a semiconductor substrate 111, a carrier accumulation layer 114 is disposed on the high conductivity layer, and a single electronic transistor 120 capable of detecting electrical charges captured in the carrier accumulation layer 114 is disposed on the of it. The write/erase operation of a memory is performed by potential change in the layer 113. The layer 113 formed on the substrate 111 where electrostatic capacity between the transistor 120 and an island 123 is constant, performs the write/erase operation. The layer 114 formed in lamination us used for a storage medium. The transistor 120 formed on the upper side, performs reading. Thus, there is achieved the architecture of a semiconductor storage circuit enabling low power consumption and high integration, and having high reliability.
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