| 摘要 |
PURPOSE: A method for forming a hafnium oxide layer using an atomic layer deposition method is provided to improve an electric characteristic of the hafnium oxide layer by performing an atomic layer deposition process. CONSTITUTION: A wafer(12) is loaded into an inside of a reactor(10) having an exhaust pump(11). The wafer(12) is heated within a predetermined temperature of 200 to 400 degrees centigrade. Hf(OC(CH3)3)4 as an Hf source is implanted into the inside of the reactor(10) during a predetermined time. The Hf source is absorbed on a surface of the wafer(12) by implanting Hf(OC(CH3)3)4 into the reactor(10). An N2 gas is implanted into the inside of the reactor(10) in order to remove the Hf source which is not reacted with the wafer(12). A H2O vapor as an oxygen source is implanted into the inside of the reactor(10). The oxygen is absorbed on the wafer(12). The N2 gas is implanted into the inside of the reactor(10) in order to remove the oxygen source which is not reacted with the wafer(12). An HfO2 layer of desired thickness is obtained by performing the above processes, repeatedly.
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