| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric memory device is provided to increase a yield of products by forming an Al2O3 hydrogen diffusion barrier film using an organic metal chemical deposition method when a ferroelectric device is manufactured. CONSTITUTION: A capacitor that is comprised of a lower electrode(20), a ferroelectric film(21) and an upper electrode(22), is formed on a semiconductor substrate in which a formation of a transistor is completed. A first Al2O3 hydrogen diffusion barrier film(23) is formed thereon by using an organic metal chemical deposition method. An inter-layer dielectric is formed thereon. A first metal wire for interconnecting the capacitor and the transistor is formed. A second Al2O3 hydrogen diffusion barrier film(26) is formed thereon by using an organic metal chemical deposition method. An inter-metal dielectric(29) is formed on the second Al2O3 hydrogen diffusion barrier film.
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