| 摘要 |
PURPOSE: A band gap reference voltage generator is provided, which can be used at a low voltage and can control a reference voltage. CONSTITUTION: The band gap reference voltage generator comprises a Vthrm reference voltage generation part(22) having a positive temperature coefficient, a Vbe reference voltage generation part(21) having a negative temperature coefficient(-2mV/deg.C), and a reference voltage generation part(30) generating a reference voltage(Vref) by comparing and amplifying an output signal of the Vbe reference voltage generation part with an output signal of the Vthrm reference voltage generation part. The Vthrm reference voltage generation part comprises the first comparison stage(23) comparing Va voltage(-) and Vb voltage(+), a PMOS transistor(MP2) supplying a power supply voltage(Vdd) to a node(Nd1) and a PMOS transistor(MP3) supplying the power supply voltage to a node(Nd2). The Vbe reference voltage generation part comprises the second comparison stage(24) comparing and amplifying Va voltage and Vb voltage from the Vthrm reference voltage generation part, a PMOS transistor(MP6) supplying the power supply voltage to a node(Nd4) and a resistor(R6) connected between the node(Nd4) and a ground voltage(Vss) node.
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