| 摘要 |
PURPOSE: A method for forming an aluminum contact plug of a semiconductor device is provided to guarantee filling of aluminium by preventing a TiAl3 layer from being formed so that a void in a via is controlled, and to improve an electrical characteristic by improving a resistivity characteristic. CONSTITUTION: A semiconductor substrate(11) on which an interlayer dielectric(12) including the via is formed, is prepared. A colli-Ti layer(13) is formed on the interlayer dielectric including the via. A colli-TiN layer(14) is formed on the colli-Ti layer. An Al low pressure seed(ALPS) Al layer(15) is formed on the colli-TiN layer including the via.
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