发明名称 |
POST ETCH PHOTORESIST STRIP WITH HYDROGEN FOR ORGANOSILICATE GLASS LOW-K ETCH APPLICATIONS |
摘要 |
Method for stripping photoresist from a semiconductor wafer including a layer of organosilicate dielectric. The method introduces a flow of hydrogen-containing gas to the wafer, and uses the hydrogen-containing gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to strip at least a portion of the photoresist from the wafer. Where the stripping of the photoresist from the semiconductor wafer is performed subsequent to an etching step performed on the wafer in an etch apparatus, the present invention in turn enables the stripping of the photoresist in situ within the etch apparatus. A surprising result of the present invention is that dramatically elevated concentrations of hydrogen gas not only enable high throughput strip rates, but that the utilization of these highly concentrated hydrogen gas mixtures can be performed in safety. |
申请公布号 |
WO0203426(A2) |
申请公布日期 |
2002.01.10 |
申请号 |
WO2001US19175 |
申请日期 |
2001.06.13 |
申请人 |
LAM RESEARCH CORPORATION;CHIEN, TING;FLANNER, JANET, M.;MOREY, IAN |
发明人 |
CHIEN, TING;FLANNER, JANET, M.;MOREY, IAN |
分类号 |
H01L21/3065;G03F7/42;H01L21/027;H01L21/311 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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