| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to increase an electrical characteristic of the transistor by improving the reliability of a gate insulation layer, and to guarantee the stability of the transistor by controlling the diffusion of boron used as a dopant in a p+ gate of a p-type metal-oxide-semiconductor(PMOS) transistor so that a gate depletion phenomenon is prevented. CONSTITUTION: A thermal oxide layer(13a) is formed on a semiconductor substrate(11). The first nitrogen-containing layer(13b) is formed on an interface between the semiconductor substrate and the thermal oxide layer. The second nitrogen-containing layer(13b) is formed on the thermal oxide layer, and a gate insulation layer(13) composed of the first nitrogen-containing layer, the thermal oxide layer and the second nitrogen-containing layer is formed. A gate material layer is formed on the gate insulation layer, and is patterned to form a gate electrode(140).
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