| 摘要 |
PURPOSE: A method for fabricating a silicon-on-insulator(SOI) device having a complete isolation layer is provided to permit a local formation of a doping region with high concentration in an active silicon layer without etching the active silicon layer. CONSTITUTION: The active silicon layer(14) having the complete isolation layer(13) is formed on a silicon substrate(11) on which a buried oxide layer(12) is formed. Next, a thermal oxide layer is formed on the active silicon layer(14), and then impurity ions are implanted with high concentration into the active silicon layer(14). By performing heat treatment, the doping region(15) with high concentration is formed. The thermal oxide layer is then removed to expose the active silicon layer(14), and an epitaxial silicon layer(16) is selectively grown only on the exposed active silicon layer(14). Next, a gate insulating layer(17), a gate material(18) and a hard mask layer(19) are sequentially formed on the epitaxial layer(16) and then patterned. Thereafter, a source/drain region(22), an interlayer dielectric layer(23) and a metal line(24) are sequentially formed.
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