| 摘要 |
PURPOSE: A method for fabricating a metal oxide semiconductor transistor is provided to reduce coupling capacitance between a gate and a drain by forming an additional oxide layer in the corner of a gate electrode, and to improve an electrical characteristic by preventing boron ions from penetrating a gate oxide layer. CONSTITUTION: The gate oxide layer(2) and a polysilicon layer(3) are formed on a semiconductor substrate(1). A photoresist layer pattern(4) is formed on the polysilicon layer to pattern the gate electrode. A predetermined depth of the polysilicon layer is etched to form a protrusion by using the photoresist layer pattern. The photoresist layer pattern is removed. After an oxide layer spacer is formed on the side surface of the protrusion of the polysilicon layer, the polysilicon layer under the oxide layer spacer is removed to form the gate electrode. An oxide process is performed on the resultant structure to form an oxide layer so that a bird's beak is generated in the corner portion under the gate electrode. An ion implantation process is performed to form a source/drain.
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