发明名称 |
Method of growing electrical conductors |
摘要 |
This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent. The metal oxide is preferably deposited according to the principles of atomic layer deposition (ALD) using a metal source chemical and an oxygen source chemical. The reduction step is preferably carried out in an ALD reactor using one or more vaporized organic compounds that contain at least one functional group selected from the group consisting of -OH, -CHO and -COOH.
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申请公布号 |
US2002004293(A1) |
申请公布日期 |
2002.01.10 |
申请号 |
US20010858820 |
申请日期 |
2001.05.15 |
申请人 |
SOININEN PEKKA J.;ELERS KAI-ERIK;HAUKKA SUVI |
发明人 |
SOININEN PEKKA J.;ELERS KAI-ERIK;HAUKKA SUVI |
分类号 |
H01L21/285;H01L21/3105;H01L21/3205;H01L21/768;(IPC1-7):H01L21/20;H01L21/320;H01L21/476;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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