发明名称 |
METHOD AND APPARATUS FOR DEPOSITING FILMS |
摘要 |
A method and apparatus for performing physical vapor deposition of a layer or a substrate, composed of a deposition chamber enclosing a plasma region for containing an ionizable gas; an electromagnetic field generating system surrounding the plasma region for inductively coupling an electromagnetic field into the plasma region to ionize the gas and generate and maintain a high density, low potential plasma; a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate; a unit associated with the target for electrically biasing the target in order to cause ions in the plasma to strike the target and sputter material from the target; and a substrate holder for holding the substrate at a location to permit material sputtered from the target to be deposited on the substrate.
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申请公布号 |
WO0163000(A3) |
申请公布日期 |
2002.01.10 |
申请号 |
WO2001US04563 |
申请日期 |
2001.02.14 |
申请人 |
TOKYO ELECTRON LIMITED;JOHNSON, WAYNE |
发明人 |
JOHNSON, WAYNE |
分类号 |
C23C14/34;C23C14/35;C23C14/40;H01J37/32;H01J37/34;(IPC1-7):H01J37/32 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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