| 摘要 |
PURPOSE: A method for manufacturing a mask of a semiconductor device is provided to form a key open mask by which at least four chips are simultaneously etched, by manufacturing a key open mask pattern having a width not greater than that of a scribe line and a maximum length. CONSTITUTION: An opaque layer is formed on a quartz substrate(15). A photoresist layer pattern confining a key open mask pattern formation region is formed on the opaque layer. The key open mask pattern(14) having the width not greater than that of the scribe line(13) in a silicon wafer(11) and the maximum length by using the photoresist layer pattern is formed while a predetermined portion of the quartz substrate is exposed. Therefore, the opaque layer is patterned to form a blocking layer(16) so that at least four chips are simultaneously etched.
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