| 摘要 |
PURPOSE: A method for forming a storage electrode of a semiconductor device is provided to form spherical polycrystalline silicon, by preventing noxious gas from being exhausted from a sacrificial oxide layer to polycrystalline silicon for a storage electrode or by previously exhausting the noxious gas. CONSTITUTION: A storage electrode contact plug(35) is formed between bitlines(33) formed on a semiconductor substrate(31). A stacked structure of a sacrificial insulation layer(37) and an etch barrier layer(39) which has a storage electrode contact hole exposing the contact plug, is formed. A nitride layer spacer(43) is formed on the exposed surface of the sacrificial insulation layer which is the sidewall of the contact hole. A polycrystalline silicon layer(45) is evaporated on the resultant structure including the contact hole. The spherical polycrystalline silicon is formed and patterned in the polycrystalline silicon layer.
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