发明名称 |
METHOD FOR ETCHING DUAL DAMASCENE STRUCTURES IN ORGANOSILICATE GLASS |
摘要 |
Method for forming dual damascene etch structures in wafers, and semiconductor devices formed according to the method. The present invention utilizes the two-step etch process to form dual damascene structures in organosilicate dielectric layers. According to one embodiment of the present invention, a first etch step is undertaken utilizing a first, low selectivity etchant, which etches completely through the trench dielectric and almost completely through the via dielectric, leaving a small remainder of the via dielectric over the barrier layer protecting metalized objects protected by the barrier layer. After the first etch step, a second etch step is performed utilizing a second, highly selective etchant. This second etch step is conducted with little damage to the barrier layer. An alternative embodiment of the present invention contemplates a "trench-first" etch strategy. |
申请公布号 |
WO0203454(A2) |
申请公布日期 |
2002.01.10 |
申请号 |
WO2001US18626 |
申请日期 |
2001.06.08 |
申请人 |
LAM RESEARCH CORPORATION;FLANNER, JANET, M.;MOREY, IAN |
发明人 |
FLANNER, JANET, M.;MOREY, IAN |
分类号 |
H01L21/3065;H01L21/311;H01L21/316;H01L21/318;H01L21/768 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|