发明名称 |
PLANARIZATION METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for planarizing a semiconductor device is provided to reduce difference in height between peripheral and central regions of a wafer when a polishing target layer on the wafer is polished by means of a chemical mechanical polishing. CONSTITUTION: The polishing target layer(26) is formed on the wafer(20) having a certain lower structure(22,24) thereon. The polishing target layer(26) is then covered with a polishing protection layer for which a photolithography process can be used. The polishing protection layer is then exposed and developed, so that a pattern(30) of the polishing protection layer remain on the peripheral region only of the wafer(20) having relatively higher polishing rate. Next, the polishing target layer(26) having the polishing protection pattern(30) thereon is planarized through the chemical mechanical polishing process using a polishing pad.
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申请公布号 |
KR20020002785(A) |
申请公布日期 |
2002.01.10 |
申请号 |
KR20000037081 |
申请日期 |
2000.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HONG, HUI IL;KIM, SANG CHEOL |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
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