| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve yield and reliability, by using an additional process for forming a spacer to reduce a leakage current between a poly 2 terminal and a poly 4 terminal. CONSTITUTION: After an isolating oxide layer, an insulation layer(6), a poly 2 fuse(5) and a poly 4 buffer(15) are formed on a semiconductor substrate(1), the first insulation layer and the second insulation layer are sequentially formed on the resultant structure. A photoresist layer pattern is formed on the second insulation layer by using a repair process and a pad mask. The second insulation layer, the first insulation layer and the poly 4 buffer are sequentially blank-etched to be left on both sidewalls of the insulation layer at both side ends of the remaining poly 4 buffer by using the photoresist layer pattern as a mask. An oxide layer as the third insulation layer is evaporated on the resultant structure by a predetermined thickness. The third insulation layer is blank-etched to form a spacer on the sidewall across the second insulation layer, the first insulation layer and the insulation layer.
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