| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a bridge between a bitline and a gate electrode, by preventing a loss of a mask insulation layer pattern on a gate electrode in an etch process for forming a bitline contact hole. CONSTITUTION: A gate insulation layer, a conductive layer for the gate electrode(16) and a mask insulation layer are stacked on a semiconductor substrate(10). The stacked structure is etched to form a stacked structure pattern of a mask insulation layer pattern(22), the gate electrode and a gate insulation layer pattern(14). An insulation layer spacer(24) is formed on the sidewall of the stacked structure, and impurity ions are implanted into the substrate at both sides of the insulation layer spacer to form a junction region. A conductive layer is formed. A contact plug(26) coupled to the junction region is formed by a chemical mechanical polishing(CMP) process, and the mask insulation layer pattern is lost in the CMP process so that a step between the contact plug and the mask insulation layer pattern is generated. A nitride layer(28) having etch selectivity regarding the mask insulation layer pattern is formed to compensate for the lost mask insulation layer pattern. An oxide layer(30) is formed on the nitride layer. The oxide layer and the nitride layer are removed to form a bitline contact hole by an etch process using a bitline contact mask as an etch mask. A bitline(36) coupled to the contact plug is formed through the bitline contact hole.
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