发明名称 Method of fabricating silica microstructures
摘要 <p>There is provided a silica microstructure fabrication method. An etch stop layer is first partially deposited on an etching area of a first silica layer formed on a semiconductor substrate. A second silica layer is deposited on the surfaces of the etch stop layer and the first silica layer. A mask patterned according to the shape of the etching area is formed on the surface of the second silica layer. The second silica layer is removed from the etching area using the mask by dry etching, and the etch stop layer is removed by wet etching. &lt;IMAGE&gt;</p>
申请公布号 EP1170603(A2) 申请公布日期 2002.01.09
申请号 EP20010116228 申请日期 2001.07.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG-SU
分类号 G02B6/13;G02B6/12;G02B6/136;G03F7/00;G03F7/26;(IPC1-7):G02B6/36 主分类号 G02B6/13
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