| 摘要 |
<p>Disclosed is a positive resist composition which ensures, on use of an exposure light source of 220 nm or less, high sensitivity, good resolution, sufficiently high resistance against dry etching, satisfactory adhesion to the substrate, and superior developability even with a developer conventionally used for resists (for example, a 2.38% aqueous tetramethylammonium hydroxide solution), the positive resist composition comprising a compound generating an acid on irradiation of an active light ray or radiation, a resin having a polycyclic-type alicyclic group and a carboxyl group, and a compound having at least two groups having a specific structure.</p> |
