| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material, a base resin of which is a polymer compound by this invention, which is useful for the microfabrication by the electron beam or far ultraviolet ray because the material is sensitive to a high energy beam and is excellent in a sensitivity, a resolving power, and an etching resistance. Especially, the same has the characteristic which forms a perpendicular pattern to a substrate because there is little absorption on the wavelength of an ArF excimer laser or a KrF excimer laser. SOLUTION: The objective ester compound is shown by formula (1). (In the formula, R1 shows hydrogen, a methyl group, or CH2CO2R3, R2 shows a hydrogen atom, a methyl group, or CO2R3, R3 shows a 1-15C straight chain, branched, or cyclic alkyl group, Z is a 2-20C divalent hydrocarbon group which may have a hetero atom and forms a single ring or a crosslinked ring together with the combined carbon atom, m is 0 or 1, n is 0, 1, 2, or 3 and the number with which is satisfied of 2m+n=2 or 3). |
