| 摘要 |
PURPOSE: To obtain an aqueous dispersion for chemical machine polishing useful for polishing copper, having a high polishing rate, capable of decreasing an erosion rate in overpolishing. CONSTITUTION: This aqueous dispersion for a chemical machine polishing comprises a heterocycle-containing compound, a surfactant and an oxidizing agent and has the mass ratio of the heterocycle-containing compound to the surfactant of 1:10-1:0.03. The aqueous dispersion further can contain a abrasive grain. Quinaldic acid, benzotriazole, etc., preferably as the heterocycle-containing compound. A sulfonate such as potassium dodecylbenzenesulfonate, ammonium dodecylbenzenesulfonate, etc., are preferably as the surfactant and ammonium persulfate, hydrogen peroxide, etc., are preferable as the oxidizing agent. An inorganic particle such as colloidal silica, etc., an organic particle such as a polymer particle, etc., or an organic inorganic composite particle obtained by combining both the particles is used as the abrasive grain. |
