| 摘要 |
<p>A method of producing an antifuse, comprises the steps of: depositing a layer of undoped or lightly doped polysilicon on a layer of silicon dioxide on a semiconductor wafer; doping one region of the polysilicon P+; doping another region of the polysilicon N+, leaving an undoped or lightly doped region between the P+ and N+ regions; and forming electrical connections to the P+ and N+ regions.</p> |
