发明名称 |
SILICON SINGLE CRYSTAL WAFER AND PRODUCTION METHOD THEREOF AND SOI WAFER |
摘要 |
<p>A silicon single crystal wafer grown by the CZ method, which is doped with nitrogen and has an N-region for the entire plane and an interstitial oxygen concentration of 8 ppma or less, or which is doped with nitrogen and has an interstitial oxygen concentration of 8 ppma or less, and in which at least void type defects and dislocation clusters are eliminated from the entire plane, and a method for producing the same. Thus, there are provided a defect-free silicon single crystal wafer having an N-region for the entire plane, in which void type defects and dislocation clusters are eliminated, produced by the CZ method under readily controllable stable production conditions with a wide controllable range, and a method producing the same.</p> |
申请公布号 |
EP1170405(A1) |
申请公布日期 |
2002.01.09 |
申请号 |
EP20000971821 |
申请日期 |
2000.11.07 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
IIDA, MAKOTO;KIMURA, MASANORI |
分类号 |
C30B15/00;C30B29/06;H01L21/02;H01L21/322;H01L27/12;(IPC1-7):C30B29/06;C30B15/20;H01L21/26;C30B33/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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