| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process by evaporating Ti by a plasma enhanced chemical vapor deposition method while forming a TiSi2 layer on the surface of a junction part, and to improve a leakage current characteristic and a contact resistance characteristic by reducing consumption of silicon atoms of the junction part. CONSTITUTION: A semiconductor substrate(11) for forming a TiSi2 layer(19) is prepared. Ti is evaporated by a plasma enhanced vapor deposition method using TiCl4 gas and H2 gas while a TiSi2 layer is formed on the semiconductor substrate. The TiSi2 layer is formed at a pressure of 2-20 Torr and at 100-500 Watt while maintaining the temperature of the semiconductor substrate within a scope from 400 to 700 deg.C.
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