| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for modifying the pattern shape of a photomask by properly correcting a deformation caused in the pattern by a photo-proximity effect. SOLUTION: In the method for correcting the pattern shape of a photomaks by a photo-proximity effect on a corner part of a wiring layer in which a quoin other than nearly horizontal quoins formed by the wiring layer is present, a first modification figure is used when the distance between a gate electrode and the corner part is within a prescribed value and a second modification figure is imparted when the distance between a gate and the corner part exceeds the prescribed value.</p> |
