发明名称 HIGH SPEED SEMICONDUCTOR SWITCHING CIRCUIT
摘要 Crosspoint switching array, each crosspoint switching circuit including silicon controlled switches for connecting signal lines of one group of transmission lines to signal lines of another group. Each switching circuit includes a transistor triggering arrangement connected between control lines of the two groups. Coincident pulses on the control lines cause current to flow in the triggering arrangement thereby switching the silicon controlled switches ON and providing signal paths between the two groups of lines. A leakage resistance is connected between the cathode of each silicon controlled switch and a source of biasing potential so that when the silicon controlled switches are turned OFF, stored charges are rapidly dissipated through the relatively low impedance paths provided by the leakage resistances.
申请公布号 US3737588(A) 申请公布日期 1973.06.05
申请号 USD3737588 申请日期 1971.10.12
申请人 GTE SYLVANIA INC,US 发明人 SUSI A,US
分类号 H03K17/00;H03K17/735;H04Q3/52;(IPC1-7):H04Q3/50 主分类号 H03K17/00
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