| 摘要 |
The present invention relates to a process for electron cyclotron resonance plasma deposition of electron-emitting carbon films, in which by injecting a microwave power into a plasma chamber incorporating an electron cyclotron resonance zone (9), ionization takes place of a gaseous mixture under a low pressure, the thus created ions and electrons diffusing along the magnetic field lines (6) to a substrate (3), the gaseous mixture comprising organic molecules and hydrogen molecules. Said process comprises the following stages:heating the substrate (3),creating a plasma from the ionized gaseous mixture,creating a potential difference between the plasma and the substrate,diffusion of the plasma up to the substrate (3) which, by heating, has reached a temperature such that said electron-emitting material is deposited on the substrate.
|
