发明名称 |
High speed, high bandwidth, high density nonvolatile memory system |
摘要 |
A nonvolatile memory system is described. The system includes ferroelectric memory cells each comprising a pair of metal plates and a ferroelectric material therebetween. Data are stored in the cells by applying an electric field corresponding to the desired data value across a given cell, thereby setting the polarity of the ferroelectric material to a given state. A datum is read from a cell by a mechanical force to the ferroelectric material and sensing charge induced on one of the cells.
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申请公布号 |
US6337287(B1) |
申请公布日期 |
2002.01.08 |
申请号 |
US19990442354 |
申请日期 |
1999.11.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOZSO FERENC MIKLOS;EMMA PHILIP GEORGE |
分类号 |
G11C14/00;G11C11/22;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792;(IPC1-7):H01L21/306 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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