| 摘要 |
A method of fabricating a semiconductor device including MOS elements comprising the steps of forming: a gate insulation layer on a semiconductor substrate; forming a gate electrode on the gate insulation layer; and implanting impurity ions into source and drain forming regions, wherein the ion implantation into said source and drain forming regions is performed in separate ion implantation steps. In at least either one of the ion implantation steps for the source forming region or for the drain forming region, a resist layer used for blocking impurities is provided with a wall extending to said gate insulation layer at a location distant from said gate electrode, said wall allowing charges to flow to the substrate. In accordance with the method provided herein, a semiconductor device having excellent data retention characteristics can be provided based on a simple process and without creating additional fabrication steps, while avoiding quality degradation of the tunnel oxide layer or the gate oxide layer resulting from charge-up at the time of ion implantation.
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