| 摘要 |
PURPOSE: A partially cross-linked polymer for bilayer photo resist, its preparation method, and a photo resist composition containing the polymer are provided, which composition is improved in the etching resistance, thereby being useful for the thin resist process, and increases the contrast ratio between the exposed area and the unexposed area. CONSTITUTION: The polymer comprises at least one selected from the compounds represented by the formulas 1 to 3. Also the polymer comprises at least one selected from the compounds represented by the formulas 1 to 3 as the first monomer; a compound represented by the formula 5 as the second monomer; and the compound represented by the formula 6 as the third monomer. In the formulas, X1, X2, Y1 and Y2 are CH2 or CH2CH2; R5 is H or CH3; s and t is an integer of 0-2; n is an integer of 1-5; X is represented by the formula 4; R6 is H or CH3; R7 is a protecting group sensitive to an acid; m is an integer of 0-5; and R8 is H or CH3. In the formula 4, R1, R2 R3 and R4 are H, a substituted or unsubstituted and linear or branched alkyl group of C1-C10, or a substituted or unsubstituted ether of C1-C10. The composition comprises 100 parts by weight of the polymer of the formula 3; 0.05-10 parts by weight of a photoacid generator; and 200-2,000 parts by weight of an organic solvent. Preferably the solvent is selected from the group consisting of cyclohexanone, cyclopentanone, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, cyclohexanone and propylene glycol methyl ether acetate.
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