| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to minimize the size of a concave groove on a tungsten plug by varying the deposition temperature of tungsten several times. CONSTITUTION: A contact hole(13) is formed in an insulator formed on a conductor(11). The first tungsten layer(14a) is deposited inside the contact hole and on the insulator at a temperature scope from 430 deg.C to 460 deg.C. The second tungsten layer(14b) is deposited on the first tungsten layer at a temperature scope from 400 deg.C to 430 deg.C. The third tungsten layer(14c) is deposited on the second tungsten layer at a temperature scope from 370 deg.C to 400 deg.C. The first, second and third tungsten layers are anisotropically etched to expose the upper portion of the insulator so that the tungsten plug(15) is formed. Metal(17) is deposited on the tungsten plug.
|
