发明名称 |
Semiconductor device and process for fabricating the same |
摘要 |
An electro-optical device such as a liquid crystal device comprises a transparent substrate and a plurality of thin film transistors for driving pixel electrodes. In order to prevent an undesirable influence of light incident on the thin film transistors, a light shielding layer is interposed between the thin film transistors and the transparent substrate. Another portion of the light-shielding layer which corresponds to the pixel electrodes, has been changed to transparent by selectively oxidizing or nitriding the layer.
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申请公布号 |
US6335540(B1) |
申请公布日期 |
2002.01.01 |
申请号 |
US19990252000 |
申请日期 |
1999.02.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG |
分类号 |
H01L27/12;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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