发明名称 Semiconductor device and process for fabricating the same
摘要 An electro-optical device such as a liquid crystal device comprises a transparent substrate and a plurality of thin film transistors for driving pixel electrodes. In order to prevent an undesirable influence of light incident on the thin film transistors, a light shielding layer is interposed between the thin film transistors and the transparent substrate. Another portion of the light-shielding layer which corresponds to the pixel electrodes, has been changed to transparent by selectively oxidizing or nitriding the layer.
申请公布号 US6335540(B1) 申请公布日期 2002.01.01
申请号 US19990252000 申请日期 1999.02.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG HONGYONG
分类号 H01L27/12;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L29/04 主分类号 H01L27/12
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