Semiconductor device and manufacturing method thereof

摘要

A semiconductor device capable of preventing diffusion of a particle of copper or the like which forms a conductive layer is provided without any increase in the number of manufacturing the steps. Further, a semiconductor device preventing diffusion of a particle forming a conductive layer into an insulating layer even when a width of the conductive layer is increased is provided. The semiconductor device includes: an insulating layer 2; a barrier layer 4; a conductive layer 5; a barrier layer 6 having an opening 11; an insulating layer 7 having a through hole 8 exposing a surface of conductive layer 5 and a part of a surface of barrier layer 6; a barrier layer 9 formed on a surface of said through hole 8 and insulating layer 7 which is in contact with an upper surface 6a of barrier layer 6; and a conductive layer 10 filling opening 11 and through hole 8.