| 发明名称 |
Method of fabricating a high reliable SOI substrate |
| 摘要 |
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
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| 申请公布号 |
US6335231(B1) |
申请公布日期 |
2002.01.01 |
| 申请号 |
US19990386782 |
申请日期 |
1999.08.31 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI |
| 分类号 |
H01L27/12;H01L21/02;H01L21/336;H01L21/762;H01L29/786;(IPC1-7):H01L21/00;H01L21/84;H01L21/30;H01L21/46 |
主分类号 |
H01L27/12 |
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