发明名称 |
Method of fabricating a dielectric antifuse structure |
摘要 |
A dielectric antifuse structure is fabricated in an integrated circuit. The antifuse structure is incorporated in a contact hole in an oxide layer and has a dielectric layer arranged between a first conductive layer and a second conductive layer.
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申请公布号 |
US2001055839(A1) |
申请公布日期 |
2001.12.27 |
申请号 |
US20010888021 |
申请日期 |
2001.06.22 |
申请人 |
LEHR MATTHIAS;TEWS RENE |
发明人 |
LEHR MATTHIAS;TEWS RENE |
分类号 |
H01L23/525;(IPC1-7):H01L21/82 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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