发明名称 Method of fabricating a dielectric antifuse structure
摘要 A dielectric antifuse structure is fabricated in an integrated circuit. The antifuse structure is incorporated in a contact hole in an oxide layer and has a dielectric layer arranged between a first conductive layer and a second conductive layer.
申请公布号 US2001055839(A1) 申请公布日期 2001.12.27
申请号 US20010888021 申请日期 2001.06.22
申请人 LEHR MATTHIAS;TEWS RENE 发明人 LEHR MATTHIAS;TEWS RENE
分类号 H01L23/525;(IPC1-7):H01L21/82 主分类号 H01L23/525
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