发明名称 |
Semiconductor device and method and apparatus for manufacturing the same |
摘要 |
In a semiconductor device, an interlevel insulating film formed between a Cu interconnection, formed by damascene, and an upper metal interconnection layer on it has a multilayered structure made up of a Cu diffusion preventive insulating layer and another insulating film. The Cu diffusion preventive insulating layer has a multilayered structure made up of not less than two layers. A method for manufacturing the semiconductor device is also disclosed.
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申请公布号 |
US2001054765(A1) |
申请公布日期 |
2001.12.27 |
申请号 |
US20010883370 |
申请日期 |
2001.06.19 |
申请人 |
NEC CORPORATION |
发明人 |
OHTO KOICHI;MATSUI TAKAYUKI |
分类号 |
C23C16/30;C23C16/32;C23C16/34;C23C16/36;H01L21/318;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/053;H01L23/12;H01L23/48 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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