| 摘要 |
The invention relates to a solid-state pickup element that can achieve both improvement in the sensitivity and reduction of pixel size and a method for producing the same, wherein a solid-state pickup element 1 is constructed, which includes a first conductive type semiconductor area 21, which is formed at least so as to include the inside of the semiconductor substrate 2 upward of the overflow barrier area 3 inside the semiconductor substrate 2, and a charge accumulating area 6 at the position corresponding to the first conductive type semiconductor area 21 of the light receptive sensor part 5 in the epitaxial layer 4 on the semiconductor substrate 2. Also, an overflow barrier area 3 is formed in the semiconductor substrate 2, and the first conductive type semiconductor area 21 is formed on the surface, respectively, wherein an epitaxial layer 3 is formed on the semiconductor substrate 2, and a charge accumulating area 6 is formed at the position corresponding to the first conductive type semiconductor area 21 on the surface side of the epitaxial layer 3, thereby producing a solid-state pickup element 1.
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