| 摘要 |
<p>PROBLEM TO BE SOLVED: To perform a test so that plural word lines are not select in a same block. SOLUTION: A control signal MBPRG is inputted to individual block decoder constituting a block decoder section 37 of an ACT type flash memory. A level of the control signal MBPRG is made to 'H' and all blocks are selected independently of contents of address signals a5-a13, and one work line WL is selected out of all blocks by addresses a0-a4. Thereby, one word line WL is selected for each block electrically separated by a select-transistor, a bad influence is not given to a test of the other memory cells even if a memory cell having negative threshold voltage exists in a memory cell in which write-in is performed at the time of test by applying simultaneously write-in voltage at the time of test to ward lines WL having the same numbers as the number of blocks.</p> |
