| 摘要 |
PROBLEM TO BE SOLVED: To improveΔR/R (resistance change rate) in a spin-valve thin-film magnetic element corresponding to the tendency for narrowing a track. SOLUTION: The spin-valve thin-film magnetic element is mainly constituted of a laminate 16 and an electrode layer 18. The laminate 16 is formed on a substrate 10 by orderly laminating an antiferromagnetic layer 11, a fixed magnetic layer 12, a nonmagnetic conductive layer 13, a free magnetic layer 14, a backed layer (average free distance extension layer) B1, mirror-surface reflection layers S1 and S2 that are made of an oxide such asα-Fe2O3 and NiO, or a semimetal Heusler alloy such as NiMnSb and PtMnSb. The electrode layer 18 is formed at both the sides of the laminate 16. |
