| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of a gate insulating film caused by electric charges in a process of etching metal wiring layer and to prevent the generation of leakage current in a semiconductor device. SOLUTION: The semiconductor device is equipped with a semiconductor substrate 1, gate electrodes 3, an impurity diffusion region 4, at least a wiring layer 6 formed through the intermediary of an interlayer insulating film 5, containing relay pins connected electrically to the gate electrodes 3, and an uppermost wiring layer 8 formed through the intermediary of an interlayer insulating film 7, containing wiring patterns which are electrically connected to the relay pins respectively.
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