| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface light emitting laser wherein a long wavelength band surface light emitting laser is effectively excited by using an optical pump, and a DBR of high reflectance and an active layer can be formed in a monolithic manner on an InP substrate without using fusion welding. SOLUTION: Among semiconductors constituting a semiconductor distribution Bragg reflection mirror, refractive indexes of semiconductor whose refractive index is the smallest and semiconductor whose refractive index is the largest are made nD1, nD2 respectively, and refractive index of a carrier confining layer is made nS. In this case, a relation of n1<nS<nD2 is held.
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