HIGH DENSITY PLASMA FLUORINATED SILICON GLASS PROCESS STACK AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using an interlayer insulating film containing a low permittivity material such as a fluorinated silicon glass(FSG) which does not bring about a problem in association with a transfer of a fluorine and a method for manufacturing the same. SOLUTION: The semiconductor device and the method for manufacturing the same are provided. In one embodiment, the device comprises a metal mechanism disposed on a semiconductor substrate so that the mechanism has a dielectric layer surrounding the mechanism. The device further comprises a barrier layer containing a silicon and disposed on the mechanism to isolate the mechanism from the dielectric layer. Accordingly, the barrier layer has a trend of preventing a diffusion of the dielectric layer in the mechanism. In another embodiment, the device comprises a cap layer disposed over the dielectric layer and a metal mechanism disposed over the cap layer.